S.N. Ekkanath Madathil: search on Z-Library

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1

[IEEE 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - New Orleans, LA, USA (2020.3.15-2020.3.19)] 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation

Luo, Peng, Ekkanath Madathil, Sankara Narayanan, Nishizawa, Shin-ichi, Saito, Wataru

Year:

2020

File:

PDF, 2.01 MB

2020

2

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

F.J. Clough, A.O. Brown, S.N.Ekkanath Madathil, W.I. Milne

Journal:

Thin Solid Films

Year:

1995

Language:

english

File:

PDF, 530 KB

english, 1995

3

Anode Engineering for the Insulated Gate Bipolar Transistor—A Comparative Review

Green, David W., Vershinin, Konstantin V., Sweet, Mark, Narayanan, Ekkanath Madathil Sankara

Journal:

IEEE Transactions on Power Electronics

Year:

2007

Language:

english

File:

PDF, 1.08 MB

english, 2007

4

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

F.J. Clough, A.O. Brown, S.N. Ekkanath Madathil, W.I. Milne

Journal:

Microelectronic Engineering

Year:

1995

Language:

english

File:

PDF, 363 KB

english, 1995

5

A high performance RF LDMOSFET in thin film SOI technology with step drift profile

J. Luo, G. Cao, S.N. Ekkanath Madathil, M.M. De Souza

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 183 KB

english, 2003

6

Numerical Evaluation of the Short-Circuit Performance of 3.3-kV CIGBT in Field-Stop Technology

Long, Hong Yao, Luther-King, Ngwendson, Sweet, Mark R., Narayanan, Ekkanath Madathil Sankara

Journal:

IEEE Transactions on Power Electronics

Year:

2012

Language:

english

File:

PDF, 1.11 MB

english, 2012

7

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Next generation 1200V trench CIGBT for high voltage applications

Long, Hong Yao, Sweet, Mark R., De Souza, Maria Merlyne, Narayanan, Ekkanath Madathil Sankara

Year:

2015

Language:

english

File:

PDF, 546 KB

english, 2015

8

[IEEE 2015 IEEE Applied Power Electronics Conference and Exposition (APEC) - Charlotte, NC, USA (2015.3.15-2015.3.19)] 2015 IEEE Applied Power Electronics Conference and Exposition (APEC) - The next generation 1200V Trench Clustered IGBT technology with improved trade-off relationship

Long, Hong Yao, Sweet, Mark R., De Souza, Maria Merlyne, Narayanan, Ekkanath Madathil Sankara

Year:

2015

Language:

english

File:

PDF, 993 KB

english, 2015

9

Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

Luo, Peng, Long, Hong Yao, Sweet, Mark R., De Souza, Maria Merlyne, Narayanan, Ekkanath Madathil Sankara

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.93 MB

english, 2018

10

3-D Scaling Rules for High-Voltage Planar Clustered IGBTs

Luo, Peng, Madathil, Shankar Narayanan Ekkanath

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 5.18 MB

2020

11

Luminescent chemically-etched porous poly-crystalline silicon on insulating substrates

T. J. Pease, S. N. Ekkanath-Madathil, S. C. Bayliss

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 1.04 MB

english, 2000

12

Investigation of Negative Gate Capacitance in MOS-Gated Power Devices

Long, Hong Yao, Sweet, Mark R., Narayanan, Ekkanath Madathil Sankara

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 956 KB

english, 2012

13

Numerical Evaluation of 10-kV Clustered Insulated Gate Bipolar Transistor in 4H-SiC

Menon, K. G., Narayanan, Ekkanath Madathil Sankara

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.99 MB

english, 2013

14

Novel Lateral MOS Controlled Power Devices and Technologies for High Voltage Integrated Circuits

Ekkanath-Madathil, S.N., Souza, M.M. De, Qin, Zuo Xiang

Journal:

Solid State Phenomena

Year:

1997

File:

PDF, 311 KB

1997

15

Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC

Menon, Kalyani G., Ngwendson, Luther King, Nakajima, Akira, Sankara Narayanan, Ekkanath Madathil, Bruce, Graham P.

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 457 KB

english, 2012

16

International Seminar on Power Semiconductors 2014

Madathil, Shankar Ekkanath

Journal:

IET Power Electronics

Year:

2015

Language:

english

File:

PDF, 46 KB

english, 2015

17

[IEEE 2016 IEEE Energy Conversion Congress and Exposition (ECCE) - Milwaukee, WI, USA (2016.9.18-2016.9.22)] 2016 IEEE Energy Conversion Congress and Exposition (ECCE) - Short-circuit protection of power converters with SiC current limiters

Alwash, Mahmood, Sweet, Mark, Madathil, Ekkanath, Narayanan, Sankara, Bruce, Graham

Year:

2016

Language:

english

File:

PDF, 1.30 MB

english, 2016

18

Snap-back free shorted-anode super-junction TCIGBT

Luo, Peng, Sweet, Mark, Narayanan, Ekkanath Madathil Sankara

Journal:

IET Power Electronics

Year:

2018

Language:

english

File:

PDF, 3.66 MB

english, 2018

19

Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs

Unni, Vineet, Long, Hong Yao, Yan, Hongyang, Nakajima, Akira, Kawai, Hiroji, Sankara Narayanan, Ekkanath Madathil

Journal:

IET Power Electronics

Year:

2018

Language:

english

File:

PDF, 5.38 MB

english, 2018

20

[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation

Luo, Peng, Ekkanath Madathil, Sankara Narayanan, Nishizawa, Shin-ichi, Saito, Wataru

Year:

2019

File:

PDF, 7.33 MB

2019

21

Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices

Luo, Peng, Madathil, Sankara Narayanan Ekkanath, Nishizawa, Shin-ichi, Saito, Wataru

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 3.44 MB

2020

22

Turn-off dV/dt Controllability in 1.2kV MOS-Bipolar Devices

LUO, PENG, Sankara Narayanan, Ekkanath Madathil, Nishizawa, Shin-ichi, Saito, Wataru

Journal:

IEEE Transactions on Power Electronics

Year:

2020

File:

PDF, 3.24 MB

2020

23

[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation

Luo, Peng, Madathil, Sankara Narayanan Ekkanath, Nishizawa, Shin-ichi, Saito, Wataru

Year:

2020

File:

PDF, 2.49 MB

2020

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